Title :
MNOS memory transistors in simple memory arrays
Author :
Carlstedt, L. Gunnar ; Svensson, Christer M.
fDate :
10/1/1972 12:00:00 AM
Abstract :
The basic properties of MNOS memory transistors as digital memory elements are reviewed. Optimization procedures for obtaining maximum memory retention are presented and possible arrangements of memory transistors in simple arrays and writing and reading procedures for such arrays are discussed.
Keywords :
Metal-insulator-semiconductor devices; Optimisation; Semiconductor storage devices; metal-insulator-semiconductor devices; optimisation; semiconductor storage devices; Charge carrier processes; Charge carriers; MOSFETs; PROM; Random access memory; Read-write memory; Silicon; Thickness control; Threshold voltage; Writing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1052897
