Experimental Gain and Noise Parameters of Microwave GaAs FET´s in the L and S Bands (Short Papers)

The design of microwave amplifiers with GaAs FET´s assumes the knowledge of the four gain and the four noise parameters as a function of the biasing conditions. The gain parameters at three different bias conditions have been calculated by computer from the measured scattering parameters. The noise figures as a function of the same bias conditions have also been measured. The four fundamental noise parameters have been determined. The GaAs FET´s are units from Plessey (England). At present, these are the only units which are commercially available.