• DocumentCode
    904533
  • Title

    SB-IGFET, II: An ion implanted IGFET using Schottky barriers

  • Author

    Lepselter, M.P.

  • Volume
    57
  • Issue
    5
  • fYear
    1969
  • fDate
    5/1/1969 12:00:00 AM
  • Firstpage
    812
  • Lastpage
    813
  • Abstract
    Insulated-gate field-effect transistors have been made, which combine the advantages inherent to Schottky barrier source and drain electrodes with ion implantation. This device has a self-aligned gate structure achieved by using the thick gate electrode as a mask during the ion implantation process.
  • Keywords
    Boron; Electrodes; FETs; Geometry; Ion implantation; Platinum; Pulse circuits; Schottky barriers; Schottky diodes; Silicides;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7089
  • Filename
    1449019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=904533