Title :
An Approximate Comparison Between n+-p-p+ and p+-n-n+ Silicon TRAPATT Diodes (Short Papers)
Author :
Haddad, G.I. ; Lee, C.M. ; Schroeder, W.E.
fDate :
7/1/1973 12:00:00 AM
Abstract :
The difference in the ionization rates of holes and electrons in Si results in different properties of n+-p-p+ and p+-n-n+ TRAPATT diodes. An approximate analysis is presented which shows these differences and indicates superior performance in the n+-p-p+ structure.
Keywords :
Current density; Diodes; Electron traps; Microwave antennas; Microwave theory and techniques; Performance analysis; Rectangular waveguides; Silicon; Slot antennas; Voltage control;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1973.1128046
