Title :
Excess current in p--n junctions associated with surface states
Author_Institution :
CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
Abstract :
Surface effects are known to cause excess currents in p--n junctions. A quantitative model is proposed which shows that the essential contribution can be related to surface recombination velocity. An apparent exp (V/mUT) dependence is found for this current component.
Keywords :
p-n junctions; semiconductor junctions; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680237
