Abstract :
Silicon Schottky-barrier diodes have been developed which simulate the performance of point-contact (1N23WE) diodes in the standard mounts. These diodes along with 1N23 point-contact and back diodes were examined under 9.375 GHz excitation for noise temperature over the IF range of 5 kHz to 180 kHz. The Schottky diodes had noise temperatures comparable to and often lower than the back diodes. This fact, together with lower conversion loss and convenient impedance levels, makes the Schottky-barrier diodes generally advantageous in Doppler radars and similar applications.
