Title :
Oxide-thickness determination from C/V measurement in an MOS capacitor
Author :
Sarrabayrouse, G. ; Campabadal, F. ; Prom, J.L.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
8/1/1989 12:00:00 AM
Abstract :
A method is proposed to evaluate the oxide thickness in an MOS structure from C/V measurements. A comparison with TEM measurements is given.
Keywords :
capacitors; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor device testing; thickness measurement; C/V measurement; MOS capacitor; oxide thickness;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
