DocumentCode
905215
Title
Thermal resistance of gallium-arsenide field-effect transistors
Author
Webb, P.W. ; Russell, I.A.D.
Author_Institution
Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
Volume
136
Issue
5
fYear
1989
fDate
10/1/1989 12:00:00 AM
Firstpage
229
Lastpage
234
Abstract
The authors describe some thermal simulations for heat flow in gallium-arsenide field-effect transistors where the effects of surface metallisation and via holes are modelled. The results were found to be significantly different to those previously published, which were based on simpler physical models. The effects of surface metallisation were found to be important in modelling the thermal resistance, but the effects of via holes less so, using current technological limitations.
Keywords
III-V semiconductors; field effect transistors; gallium arsenide; heat transfer; metallisation; semiconductor device models; thermal analysis; thermal resistance; GaAs; III-V semiconductors; field-effect transistors; heat flow; modelling; surface metallisation; thermal resistance; thermal simulations; via holes;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
216667
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