Interferometric quantum well modulators with gain

Author

Zucker, J.E. ; Jones, K.L. ; Miller, B.I. ; Young, M.G. ; Koren, U. ; Tell, B. ; Brown-Goebeler, K.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

10

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

924

Lastpage

932

Abstract

Details on the design, fabrication and properties of the first interferometric intensity modulators with monolithically integrated optical gain are presented. These guided-wave devices make use of two sets of InP-based quantum well heterostructures that are contained in a single base wafer and individually designed for enhanced electrorefraction and amplification at 1.55 μm. The unique quantum well electrooptic properties as well as the fabrication techniques and waveguide design issues that determine final device performance are discussed

Keywords

electro-optical devices; integrated optics; light interferometers; optical modulation; optical waveguides; semiconductor junction lasers; 1.55 micron; IR; InP; InP-based quantum well heterostructures; enhanced electrorefraction; fabrication techniques; guided-wave devices; interferometric intensity modulators; monolithically integrated optical gain; quantum well electrooptic properties; quantum well modulators; semiconductor quantum wells; single base wafer; waveguide design; Electrooptic devices; Electrooptical waveguides; Integrated optics; Intensity modulation; Optical design; Optical device fabrication; Optical interferometry; Optical modulation; Optical waveguides; Stimulated emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.144915

Filename

144915