Title :
Interferometric quantum well modulators with gain
Author :
Zucker, J.E. ; Jones, K.L. ; Miller, B.I. ; Young, M.G. ; Koren, U. ; Tell, B. ; Brown-Goebeler, K.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
Details on the design, fabrication and properties of the first interferometric intensity modulators with monolithically integrated optical gain are presented. These guided-wave devices make use of two sets of InP-based quantum well heterostructures that are contained in a single base wafer and individually designed for enhanced electrorefraction and amplification at 1.55 μm. The unique quantum well electrooptic properties as well as the fabrication techniques and waveguide design issues that determine final device performance are discussed
Keywords :
electro-optical devices; integrated optics; light interferometers; optical modulation; optical waveguides; semiconductor junction lasers; 1.55 micron; IR; InP; InP-based quantum well heterostructures; enhanced electrorefraction; fabrication techniques; guided-wave devices; interferometric intensity modulators; monolithically integrated optical gain; quantum well electrooptic properties; quantum well modulators; semiconductor quantum wells; single base wafer; waveguide design; Electrooptic devices; Electrooptical waveguides; Integrated optics; Intensity modulation; Optical design; Optical device fabrication; Optical interferometry; Optical modulation; Optical waveguides; Stimulated emission;
Journal_Title :
Lightwave Technology, Journal of
