Title :
A microwave evaluation of the velocity-field characteristic in different regions of individual epitaxial gallium-arsenide layers
Author :
Cohen, Laurent D.
fDate :
7/1/1969 12:00:00 AM
Abstract :
The velocity (current)-electric field characteristic has been measured in different regions of individual epitaxial gallium-arsenide wafers by a high-power microwave technique. Epitaxial-n layers on semi-insulating substrates ranging in resistivity from approximately 0.5 to 5 Ω cm have been characterized. Trends in high-field microwave properties with normally specified low-field dc material properties are indicated.
Keywords :
Bonding; Current measurement; Delay effects; Frequency; Gallium arsenide; Insertion loss; Magnetic field measurement; Magnetic materials; Material properties; Polarization;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1969.7239
