Title :
Multilevel memory using single-electron turnstile
Author :
Nishiguchi, K. ; Inokawa, H. ; Ono, Y. ; Fujiwara, A. ; Takahashi, Y.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi Kanagawa, Japan
Abstract :
A multilevel single-electron memory has been successfully demonstrated. Two fine gates with phase-shifted pulse voltages modulate potential barriers in a one-dimensional Si channel to transfer electrons one by one into a memory node, and the number of electrons in the node is sensed by a single-electron transistor.
Keywords :
MOS memory circuits; electric sensing devices; field effect transistors; single electron transistors; Si-SiO2; electron transfer; multilevel single-electron memory; one-dimensional Si channel; phase-shifted pulse voltages; potential barrier modulation; single-electron transistor.; single-electron turnstile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040195
