Ferromagnetic Phase in Bulk (Cd, Cr)Te Dilute Magnetic Semiconductor

Author

Ko, Kowan-Young

Author_Institution

Sch. of Mech. Eng., Ulsan Coll. Univ., Ulsan

Volume

45

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

2428

Lastpage

2430

Abstract

Metallurgical, magnetic and electrical properties of bulk Cr-doped CdTe crystal grown by vertical solidification method are reported. Structural and metallographic investigation showed homogeneous zinc-blende structure with a lattice parameter of about 6.481 Aring. Magnetic measurement showed temperature-induced magnetic phase transition with a Curie temperature ~ 362 K. Resistance with 4 probe method showed highly insulating > 10⁸Omega at room temperature. Composition analysis using field emission transmission electron microscopy revealed that it could be composed of locally different Cr-substituted CdTe region depending on Cr content.

Keywords

Curie temperature; cadmium compounds; crystal growth from solution; ferromagnetic materials; field emission electron microscopy; metallography; semimagnetic semiconductors; solidification; transmission electron microscopy; (CdCr)Te; Curie temperature; electrical properties; ferromagnetic phase; field emission transmission electron microscopy; homogeneous zinc-blende structure; lattice parameter; magnetic measurement; magnetic properties; magnetic semiconductor; metallurgical properties; solidification; structural properties; temperature-induced magnetic phase transition; Cr-doped CdTe crystal; dilute magnetic semconductor; magnetic phase transition; zinc-blende structure;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2009.2018597

Filename

4957750