Title :
P-I-N CdTe Gamma Ray Detectors by Liquid Phase Epitaxy (LPE)
Author :
Shin, S.H. ; Niizawa, G.T. ; Pasko, J.G. ; Bostrup, G.L. ; Ryan, F.J. ; Khoshnevisan, M. ; Westmark, C.I. ; Fuller, Chris
Author_Institution :
Rockwell International Science Center Thousand Oaks, CA 91360
Abstract :
A new device concept for CdTe gamma ray detectors has been demonstrated using p+(HgCdTe)-n(CdTe)-n+ (HgCdTe) diode structures. Both P+ and n+ Hg0.25Cd0.75Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction and ohmic contact formation over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm2 were fabricated. Resolutions of 10 KeV were obtained for the 122 KeV gamma peak of Co57 at room temperature.
Keywords :
Epitaxial growth; Gamma ray detectors; Heterojunctions; Ohmic contacts; P-i-n diodes; P-n junctions; PIN photodiodes; Radiation detectors; Schottky diodes; Semiconductor diodes;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4336879
