Title :
16 dB 80 GHz InGaP/GaAs HBT distributed amplifier
Author :
Arayashiki, Y. ; Ohkubo, Y. ; Amano, Y. ; Takagi, A. ; Ejima, M. ; Matsuoka, Y.
Author_Institution :
Res. Lab., Anritsu Corp., Atsugi, Japan
Abstract :
A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz.
Keywords :
III-V semiconductors; distributed amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; wideband amplifiers; 16 dB; 504 GHz; 80 GHz; InGaP-GaAs; InGaP/GaAs HBT distributed amplifier; broadband distributed amplifier; gain cells; gain-bandwidth product; high-gain amplifier; high-performance high-reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040182
