• DocumentCode
    906439
  • Title

    Optimum design of thin-layer GaAs amplifiers

  • Author

    Dean, Robert H.

  • Volume
    57
  • Issue
    7
  • fYear
    1969
  • fDate
    7/1/1969 12:00:00 AM
  • Firstpage
    1327
  • Lastpage
    1328
  • Abstract
    A theoretical result shows that electron diffusion in thin-layer GaAs amplifiers produces a frequency of maximum gain which can be in the range of 1 to 100 GHz. This result is used to obtain a set of curves to aid in device design.
  • Keywords
    Conducting materials; Dielectric materials; Displays; Electrons; Frequency; Gallium arsenide; Geometry; Laplace equations; Poisson equations; Slabs;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7257
  • Filename
    1449187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906439