DocumentCode
906510
Title
D.C. numerical model for arbitrarily biased bipolar transistors in two dimensions
Author
Dubock, P.
Author_Institution
University of Southampton, Department of Electronics, Southampton, UK
Volume
6
Issue
3
fYear
1970
Firstpage
53
Lastpage
55
Abstract
A method for the complete steady-state finite-difference solution of the most general form of the equations governing transistor action in two dimensions is proposed. Attention is drawn to certain computational difficulties and the means of overcoming them. Results of the method for a limited case are reported.
Keywords
bipolar transistors; semiconductor device models;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700035
Filename
4234521
Link To Document