DocumentCode :
906553
Title :
Extremely high power silicon p-i-n diode switch
Author :
Stachejko, V.
Volume :
57
Issue :
7
fYear :
1969
fDate :
7/1/1969 12:00:00 AM
Firstpage :
1340
Lastpage :
1341
Abstract :
An extremely high power silicon p-i-n diode switch was developed for operation over the 6 to 40 MHz frequency range. It was successfully tested at 4 MW peak power, and at 100 kW average power with 1000 µs pulsewidth in a balanced duplexer configuration.
Keywords :
Capacitors; Heat sinks; Insertion loss; P-i-n diodes; Power semiconductor switches; Radio frequency; Semiconductor diodes; Silicon; Thermal resistance; Water heating;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7267
Filename :
1449197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=906553
بازگشت