• DocumentCode
    906557
  • Title

    Preswitching behaviour of amorphous chalcogenide semiconductor films

  • Author

    Thomas, D.L. ; Warren, A.C.

  • Author_Institution
    Central Electricity Research Laboratories, Leatherhead, UK
  • Volume
    6
  • Issue
    3
  • fYear
    1970
  • Firstpage
    62
  • Lastpage
    64
  • Abstract
    The preswitching nonohmic behaviour of amorphous chalcogenide films is explained by Joule heating with heat flow both parallel and perpendicular to the current. Expressions relating the threshold voltage Vc to the band gap ¿E are consistent with measurements of I/V curves and Vc at elevated pressures; it is inferred that (¿¿E/¿P)¿¿6.6×10¿6 eV bar-1
  • Keywords
    semiconductor switches;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700040
  • Filename
    4234526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906557