• DocumentCode
    906576
  • Title

    1530 V, 16.8 mΩ · cm2, 4H-SiC normally-off vertical junction field-effect transistor

  • Author

    Fursin, L.G. ; Zhao, J.H. ; Weiner, M.

  • Author_Institution
    United Silicon Carbide Inc., New Brunswick, NJ, USA
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • Firstpage
    270
  • Lastpage
    271
  • Abstract
    The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15 μm using a two-step junction termination extension. The VJFET shows a low specific on-resistance RON_SP of 16.8 mΩ · cm2.
  • Keywords
    junction gate field effect transistors; plasma CVD; semiconductor epitaxial layers; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 15 micron; 1530 V; 4H-SiC normally-off vertical junction field-effect transistor; SiC; VJFET; epitaxial regrowth; resistance; two-step junction termination; vertical channel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040165
  • Filename
    1269501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906576