Title :
1530 V, 16.8 mΩ · cm2, 4H-SiC normally-off vertical junction field-effect transistor
Author :
Fursin, L.G. ; Zhao, J.H. ; Weiner, M.
Author_Institution :
United Silicon Carbide Inc., New Brunswick, NJ, USA
Abstract :
The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15 μm using a two-step junction termination extension. The VJFET shows a low specific on-resistance RON_SP of 16.8 mΩ · cm2.
Keywords :
junction gate field effect transistors; plasma CVD; semiconductor epitaxial layers; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 15 micron; 1530 V; 4H-SiC normally-off vertical junction field-effect transistor; SiC; VJFET; epitaxial regrowth; resistance; two-step junction termination; vertical channel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040165
