• DocumentCode
    906617
  • Title

    Non-quasi-static model for MOSFET based on carrier-transit delay

  • Author

    Nakayama, N. ; Navarro, D. ; Tanaka, M. ; Ueno, H. ; Miura-Mattausch, M. ; Mattausch, H.J. ; Ohguro, T. ; Kumashiro, S. ; Taguchi, M. ; Kage, T. ; Miyamoto, S.

  • Author_Institution
    Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • Firstpage
    276
  • Lastpage
    278
  • Abstract
    A non-quasi-static MOSFET model for circuit simulation, which is based on the carrier-transit delay responsible for the channel formation during switching on, has been developed. The developed model was implemented into a circuit simulator, and good agreement of transient drain current with 2D simulation results was confirmed.
  • Keywords
    MOSFET; carrier density; carrier mobility; circuit simulation; digital simulation; semiconductor device models; switching; MOSFET; Nonquasistatic model; carrier-transit delay; channel formation; circuit simulation; switching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040054
  • Filename
    1269506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=906617