DocumentCode :
906675
Title :
Simultaneous in situ measurement of film thickness and temperature by using multiple wavelengths pyrometric interferometry (MWPI)
Author :
Boebel, Friedrich G. ; Möller, Heino
Author_Institution :
Fraunhofer Inst. of Integrated Circuits, Erlangen, Germany
Volume :
6
Issue :
2
fYear :
1993
fDate :
5/1/1993 12:00:00 AM
Firstpage :
112
Lastpage :
118
Abstract :
Film thickness and temperature are two of the most important quantities in semiconductor manufacturing. They play a fundamental role in many standard production techniques like chemical vapor deposition (CVD, LPCVD, PECVD), thermal oxidation and diffusion. They are especially important for more recently developed technologies like molecular beam epitaxy (MBE), metal organic MBE (MOMBE), metal organic CVD (MOCVD), chemical beam epitaxy (CBE), etc. In this paper, an optical in situ method for simultaneous film thickness and temperature measurements-named multiple wavelengths pyrometric interferometry (MWPI)-is introduced, which is capable of high resolution (up to 0.1 nm for thickness and 0.025 K for temperature) and for real time data evaluation. It can be used for process control as well as in situ quality inspection without time delay or additional handling mechanisms and is suitable for monitoring single films as well as multilayer structures. MWPI is insensitive to vibration, rotation and misalignment of the wafer. Due to its optical basis it is also insensitive to hostile environments like high temperature and/or chemical reactive gases
Keywords :
chemical vapour deposition; epitaxial growth; inspection; integrated circuit manufacture; light interferometry; monitoring; oxidation; process control; pyrometers; semiconductor device manufacture; spectral methods of temperature measurement; thickness measurement; CBE; CVD; LPCVD; MOCVD; MOMBE; PECVD; Si wafer; SiO2 growth; chemical beam epitaxy; chemical vapor deposition; diffusion; film thickness; metal organic CVD; metal organic MBE; monitoring; multilayer structures; multiple wavelengths pyrometric interferometry; optical in situ method; process control; quality inspection; real time data evaluation; semiconductor manufacturing; simultaneous measurement; single films; temperature; thermal oxidation; Chemical technology; Chemical vapor deposition; Molecular beam epitaxial growth; Optical films; Optical interferometry; Production; Semiconductor device manufacture; Semiconductor films; Temperature measurement; Thickness measurement;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.216929
Filename :
216929
Link To Document :
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