• DocumentCode
    906858
  • Title

    Influence of coupled plasmon-polar optical phonon modes on the mobility of electrons in GaAs

  • Author

    Moglestue, C.

  • Author_Institution
    GEC, Research Laboratories, Hirst Research Centre, Wembley, UK
  • Volume
    131
  • Issue
    6
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    188
  • Lastpage
    192
  • Abstract
    By means of time-dependent perturbation theory, the rate for the scattering of electrons from coupled plasmon-polar optical phonon modes has been derived. This rate has been expressed in a form suitable for Monte-Carlo particle modelling. The mobility of electrons in bulk GaAs has been simulated by means of this technique, both with and without the plasmon-phonon coupled modes. Although the scattering from the coupled modes is stronger than from uncoupled phonons, the energy interval over which coupled-mode scattering takes place is small. The reduction in mobility due to coupled plasmon-phonon modes is of the order of a few per cent and peaks at 1 MV m¿1.
  • Keywords
    III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; perturbation theory; phonon-plasmon interactions; GaAs; III-V semiconductor; Monte-Carlo particle modelling; coupled plasmon-polar optical phonon modes; electron mobility; electron scattering rate; plasmon-phonon coupled modes; time-dependent perturbation theory;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1984.0046
  • Filename
    4643805