DocumentCode
906858
Title
Influence of coupled plasmon-polar optical phonon modes on the mobility of electrons in GaAs
Author
Moglestue, C.
Author_Institution
GEC, Research Laboratories, Hirst Research Centre, Wembley, UK
Volume
131
Issue
6
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
188
Lastpage
192
Abstract
By means of time-dependent perturbation theory, the rate for the scattering of electrons from coupled plasmon-polar optical phonon modes has been derived. This rate has been expressed in a form suitable for Monte-Carlo particle modelling. The mobility of electrons in bulk GaAs has been simulated by means of this technique, both with and without the plasmon-phonon coupled modes. Although the scattering from the coupled modes is stronger than from uncoupled phonons, the energy interval over which coupled-mode scattering takes place is small. The reduction in mobility due to coupled plasmon-phonon modes is of the order of a few per cent and peaks at 1 MV m¿1.
Keywords
III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; perturbation theory; phonon-plasmon interactions; GaAs; III-V semiconductor; Monte-Carlo particle modelling; coupled plasmon-polar optical phonon modes; electron mobility; electron scattering rate; plasmon-phonon coupled modes; time-dependent perturbation theory;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1984.0046
Filename
4643805
Link To Document