Simple analytical one-dimensional model for saturation operation of the high-voltage bipolar power transistor

It is shown that, by making use of a suitable generation function to represent the lateral injection of base current, it is possible to obtain a simple analytical solution for one-dimensional saturation operation of the high-voltage power transistor. The model takes account of the nonthermal equilibrium state of the majority carrier and of majority-carrier current flow, and thereby gives a realistic and useful description of low-voltage low-gain saturation operation, which is the usual on-state for such devices.