• DocumentCode
    907043
  • Title

    Theory of 1/f noise in bipolar silicon planar transistors

  • Author

    Martin, J.C. ; Esteve, Daniel ; Blasquez, G. ; Ribeyrol, J.M.

  • Author_Institution
    CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
  • Volume
    6
  • Issue
    5
  • fYear
    1970
  • Firstpage
    128
  • Lastpage
    130
  • Abstract
    A theory of 1/f low-frequency noise in silicon planar transistors is developed. It relates this noise to fluctuations in base current produced by fluctuations of occupied traps in the silicon dioxide. It is shown that the theoretical relationship of noise is consistent with experiment.
  • Keywords
    bipolar transistors; noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700087
  • Filename
    4234575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907043