Title :
Relative contribution of carrier diffusion and spontaneous emission to the strength and damping of relaxation oscillations in InGaAsP/InP lasers
Author :
Leclerc, D. ; Brosson, P. ; Fernier, B. ; Benoit, J.
Author_Institution :
CGE, Centre de Recherches, Laboratoires de Marcoussis, Paris, France
fDate :
2/1/1985 12:00:00 AM
Abstract :
The damping and strength of relaxation oscillations in BH long-wavelength lasers have been investigated. In addition to previously published papers, the relative contribution of carrier diffusion effects and spontaneous emission is analysed. At moderate pumping rates, the calculated damping factor, using singlemode rate equations and a constant spontaneous carrier lifetime, is found to be in good agreement with experimental results if the finite rise time of the pulse generator is introduced. It is also shown that the overshoot depends mainly on the spontaneous emission factor. However, in general, for the calculated spontaneous emission factor, the predicted overshoot is greater than the measured one. Possible reasons for this disagreement are discussed.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; laser modes; laser theory; semiconductor junction lasers; BH long-wavelength lasers; III-V semiconductor; InGaAsP/InP lasers; carrier diffusion; constant spontaneous carrier lifetime; damping factor; moderate pumping rates; overshoot; pulse generator finite rise time; relaxation oscillation damping; relaxation oscillation strength; single-mode rate equations; spontaneous emission;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1985.0007