• DocumentCode
    907225
  • Title

    The properties of nickel in silicon

  • Author

    Ghandhi, Sorab K. ; Thiel, Frank L.

  • Author_Institution
    Rensselaer Polytechnic Institute, Troy, NY
  • Volume
    57
  • Issue
    9
  • fYear
    1969
  • Firstpage
    1484
  • Lastpage
    1489
  • Abstract
    This paper describes the properties of active nickel centers in silicon. In particular, the role of nickel in both increasing and reducing minority carrier lifetime in silicon integrated circuits is described, and an assessment made of its use in this application.
  • Keywords
    Charge carrier lifetime; Energy states; Furnaces; Gettering; Gold; Grain boundaries; Nickel; Silicon; Solids; Temperature;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7323
  • Filename
    1449253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907225