Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Abstract :
A method is described whereby the surface-state density of an m.i.s. structure can be measured over a fairly wide range of energies in the band gap. The method involves measurements of the surface photovoltage at moderate light intensities. Results obtained by this method are shown to be in good agreement with those obtained by other methods.
