DocumentCode
907348
Title
Recent datareview from EMIS. lonisation coefficient in GaAs, doping dependence
Author
David, J.P.R.
Volume
132
Issue
1
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
47
Lastpage
48
Keywords
III-V semiconductors; gallium arsenide; impact ionisation; semiconductor doping; GaAs; III-V semiconductor; Pt-GaAs Schottky diodes; avalanche photodiodes; doping dependence; electron ionisation coefficients; hole ionisation coefficients; noise; p-n junction diodes;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1985.0012
Filename
4643852
Link To Document