Title :
Recent datareview from EMIS. lonisation coefficient in GaAs, doping dependence
fDate :
2/1/1985 12:00:00 AM
Keywords :
III-V semiconductors; gallium arsenide; impact ionisation; semiconductor doping; GaAs; III-V semiconductor; Pt-GaAs Schottky diodes; avalanche photodiodes; doping dependence; electron ionisation coefficients; hole ionisation coefficients; noise; p-n junction diodes;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0012
