Title :
Saturation in bipolar transistors
Author :
Buckingham, M.J. ; Faulkner, E.A.
Author_Institution :
University of Reading, J.J. Thomson Laboratory, Reading, UK
Abstract :
A computer solution is obtained for the voltage drop across a saturated transistor as a function of IC/IB, on the assumption that the emitter and collector currents may each be expressed as a superposition of three voltage-dependent terms. The result, showing good agreement with experiment, is a family of curves with the base current as the variable parameter.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700118
