DocumentCode
907356
Title
Saturation in bipolar transistors
Author
Buckingham, M.J. ; Faulkner, E.A.
Author_Institution
University of Reading, J.J. Thomson Laboratory, Reading, UK
Volume
6
Issue
6
fYear
1970
Firstpage
167
Lastpage
169
Abstract
A computer solution is obtained for the voltage drop across a saturated transistor as a function of IC/IB, on the assumption that the emitter and collector currents may each be expressed as a superposition of three voltage-dependent terms. The result, showing good agreement with experiment, is a family of curves with the base current as the variable parameter.
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700118
Filename
4234607
Link To Document