Title :
Measurement and analysis of planar stripe-geometry GAIAs/GaAs heterojunction laser wavefronts and their variation with pumping current
Author :
Manko, M.A. ; Makhsudov, B.I. ; Mikaelyan, G.T. ; van Hoi, Pham
Author_Institution :
USSR Academy of Sciences, P.N. Lebedev Physical Institute, Moscow, USSR
fDate :
2/1/1985 12:00:00 AM
Abstract :
The far-field patterns and the wavefronts of planar stripe-geometry GaAIAs/GaAs lasers, as well as their variation with pumping current, have been investigated with the help of apparatus based on the Michelson interferometer. Experimental results were compared to the theoretical model of the planar stripe-geometry heterostructure injection laser, using a dielectrical slab and Epstein layer. The effect of kinks in the output (light/current) characteristics on the laser wavefront was studied.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light interferometry; semiconductor junction lasers; Epstein layer; III-V semiconductor; Michelson interferometer; dielectric slab; effect of kinks; far-field patterns; light current characteristics; output characteristics; planar stripe-geometry GaAlAs/GaAs heterojunction laser wavefronts; pumping current;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1985.0013
