DocumentCode :
907384
Title :
Metallization systems for silicon integrated circuits
Author :
Terry, Lewis E. ; Wilson, Richard W.
Author_Institution :
Motorola Inc., Phoenix, Ariz.
Volume :
57
Issue :
9
fYear :
1969
Firstpage :
1580
Lastpage :
1586
Abstract :
An investigation into single and composite layered metallization systems is described with respect to their limitations, possible failure mechanisms, and problems encountered in fabrication. Systems investigated include metals such as chromium, titanium, tungsten, and molybdenum in conjunction with gold. Comparisons are made to conventional aluminum with respect to ohmic contact to silicon, metallurgical reactions, behavior in adverse environmental conditions, method of deposition, and processing difficulties.
Keywords :
Aluminum; Chromium; Fabrication; Failure analysis; Gold; Integrated circuit metallization; Ohmic contacts; Silicon; Titanium; Tungsten;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7339
Filename :
1449269
Link To Document :
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