DocumentCode
907384
Title
Metallization systems for silicon integrated circuits
Author
Terry, Lewis E. ; Wilson, Richard W.
Author_Institution
Motorola Inc., Phoenix, Ariz.
Volume
57
Issue
9
fYear
1969
Firstpage
1580
Lastpage
1586
Abstract
An investigation into single and composite layered metallization systems is described with respect to their limitations, possible failure mechanisms, and problems encountered in fabrication. Systems investigated include metals such as chromium, titanium, tungsten, and molybdenum in conjunction with gold. Comparisons are made to conventional aluminum with respect to ohmic contact to silicon, metallurgical reactions, behavior in adverse environmental conditions, method of deposition, and processing difficulties.
Keywords
Aluminum; Chromium; Fabrication; Failure analysis; Gold; Integrated circuit metallization; Ohmic contacts; Silicon; Titanium; Tungsten;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7339
Filename
1449269
Link To Document