Title :
Optically excited (Ga, In, As, P) film lasers
Author_Institution :
Generaldirektion PTT, Technical Centre, Bern, Switzerland
fDate :
2/1/1985 12:00:00 AM
Abstract :
Optically excited (Ga, In, As, P) film lasers at 1.3 and 1.5 ¿¿m have been investigated. The lasers showed single-mode emission and a tuning range of up to 160 nm. The laser threshold Pt and the differential quantum efficiency ¿¿D have been investigated in resonators with different reflectivities. Optimum results (Pt = 100 MW/cm2, ¿¿D = 2, 5%) have been achieved in an asymmetric resonator with R1 = 0.92, R2 = 0.75. An upper limit for the carrier density during excitation of n ¿¿ 1.1919 cm¿¿3 is estimated from near-field measurements.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; laser tuning; optical pumping; semiconductor epitaxial layers; solid lasers; 1.3 microns; 1.5 microns; III-V semiconductor; asymmetric resonator; carrier density upper limit; differential quantum efficiency; laser threshold; near-field measurements; optically excited (Ga,In,As,P) film lasers; reflectivities; resonators; single-mode emission; tuning range;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1985.0015
