Title :
Semiconductor raman laser
Author :
Suto, K. ; Nishizawa, J.
Author_Institution :
Tohoku University, Assistant Professor of the Research Institute of Electrical Communication, Sendai, Japan
fDate :
2/1/1985 12:00:00 AM
Abstract :
The semiconductor Raman laser using the longitudinal optical phonon mode of GaP has a very low threshold value of optical input power. To reduce the threshold optical input power and power density further, a crystal as thin as 160 ¿¿m with a wave-guiding structure is used. Epitaxial layers of GaP with a thickness of 280 ¿¿m are demonstrated as the low-threshold semiconductor Raman laser, for which the threshold input power density is as low as 1.7 ¿¿ 106 W/cm2.
Keywords :
III-V semiconductors; Raman lasers; gallium compounds; lattice phonons; GaP; III-V semiconductor; epitaxial layers; longitudinal optical phonon mode; low-threshold semiconductor Raman laser; optical input power; power density; semiconductor Raman laser; threshold value; waveguiding structure;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1985.0016
