pMOS transistors, intrinsic mobility and their surface degradation parameters at cryogenic temperatures

The intrinsic low-field mobility μ₀ and the mobility surface-degradation constants θ₀ and θ_B in varying channel length pMOS transistors at cryogenic temperatures are presented. It was found the μ₀ increased from 180 cm²/V s at 300 K to 1260 cm²/V at 77 K, and that θ₀ also increased with 0.10 at 300 K to 0.49 at 77 K. These two parameters were extracted using an analytical model for the pMOS devices in its ohmic mode of operation that is very suitable for use in circuit simulation programs such as SPICE