DocumentCode :
907554
Title :
Bistability and instability in the output of a twin GaAs/GaAlAs diode external cavity ring laser
Author :
McLnerney, J. ; Reekie, L. ; Bradley, D.J.
Author_Institution :
University of Dublin, Trinity College, Laser Group Department of Pure and Applied Physics, Dublin, Ireland
Volume :
132
Issue :
1
fYear :
1985
fDate :
2/1/1985 12:00:00 AM
Firstpage :
90
Lastpage :
96
Abstract :
Hysteresis and high quantum efficiency have been observed in the light-output/injection-current characteristics of a twin-diode external cavity ring laser. The diodes are GaAs/GaAlAs double heterostructure, 20 ¿¿m oxide stripe devices, AR coated and symmetrically placed in the ring. Under certain conditions the output in the bistable region became unstable, and slow, regular oscillations were observed. With increasing drive, this oscillatory behaviour became more irregular and eventually degenerated to chaos. We propose nonlinear effective self-focusing by the mutual action of the counterpropagating beams, in the ring laser as a possible mechanism to explain the effects observed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical bistability; optical self-focusing; ring lasers; semiconductor junction lasers; AR coated; GaAs/GaAlAs double heterostructure; III-V semiconductor; antireflection coating; bistability; bistable region; chaos; counterpropagating beams; high quantum efficiency; hysteresis; instability; light-output/injection-current characteristics; nonlinear effective self-focusing; oscillatory behaviour; output; oxide strip devices; slow regular oscillations; twin GaAs/GaAlAs diode external cavity ring laser;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j.1985.0018
Filename :
4643873
Link To Document :
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