Bistability and instability in the output of a twin GaAs/GaAlAs diode external cavity ring laser

Author

McLnerney, J. ; Reekie, L. ; Bradley, D.J.

Author_Institution

University of Dublin, Trinity College, Laser Group Department of Pure and Applied Physics, Dublin, Ireland

Volume

132

Issue

1

fYear

1985

fDate

2/1/1985 12:00:00 AM

Firstpage

90

Lastpage

96

Abstract

Hysteresis and high quantum efficiency have been observed in the light-output/injection-current characteristics of a twin-diode external cavity ring laser. The diodes are GaAs/GaAlAs double heterostructure, 20 ¿¿m oxide stripe devices, AR coated and symmetrically placed in the ring. Under certain conditions the output in the bistable region became unstable, and slow, regular oscillations were observed. With increasing drive, this oscillatory behaviour became more irregular and eventually degenerated to chaos. We propose nonlinear effective self-focusing by the mutual action of the counterpropagating beams, in the ring laser as a possible mechanism to explain the effects observed.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical bistability; optical self-focusing; ring lasers; semiconductor junction lasers; AR coated; GaAs/GaAlAs double heterostructure; III-V semiconductor; antireflection coating; bistability; bistable region; chaos; counterpropagating beams; high quantum efficiency; hysteresis; instability; light-output/injection-current characteristics; nonlinear effective self-focusing; oscillatory behaviour; output; oxide strip devices; slow regular oscillations; twin GaAs/GaAlAs diode external cavity ring laser;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

DOI

10.1049/ip-j.1985.0018

Filename

4643873