Title :
Degradation mechanism of m.o.s. structures and transistors under ionising radiation
Author :
Esteve, Daniel ; Buxo, J.
Author_Institution :
CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
Abstract :
The physical nature of the emission-current mechanism involved at each heterojunction when m.o.s. components are irradiated is discussed by the authors. They test the validity of this mechanism with an overall experiment, and analyse its practical consequences on the form of the ¿VG(VG) degradation curve.
Keywords :
metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; radiation effects; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700142
