DocumentCode :
907662
Title :
Theory for high-efficiency oscillations in silicon avalanche diodes
Author :
Cottam, M.G.
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Volume :
6
Issue :
7
fYear :
1970
Firstpage :
203
Lastpage :
205
Abstract :
Design and performance criteria have been deduced for high-efficiency oscillations in p+¿n¿n+ and n+¿p¿p+ avalanche diodes. A TRAPATT approach is used with realistic analytic approximations for the carrier velocities and ionisation coefficients. A comparison is made with experimental data.
Keywords :
avalanche diodes; microwave devices; microwave generation; microwave measurement; microwave oscillators; semiconductor diodes; silicon;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19700146
Filename :
4234636
Link To Document :
بازگشت