DocumentCode :
907689
Title :
A negative resistance diode based upon double injection in thallium-doped silicon
Author :
Henderson, H.T. ; Ashley, K.L.
Volume :
57
Issue :
9
fYear :
1969
Firstpage :
1677
Lastpage :
1677
Abstract :
Limited success is reported in growing a thallium-doped silicon crystal, partially compensated with phosphorus. A diode constructed of this material gives a negative-differential resistance at the onset of double injection.
Keywords :
Bandwidth; Electron traps; Equations; Impurities; Oscilloscopes; Semiconductor diodes; Silicon; Tail; Temperature; Thermal resistance;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1969.7368
Filename :
1449298
Link To Document :
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