• DocumentCode
    907689
  • Title

    A negative resistance diode based upon double injection in thallium-doped silicon

  • Author

    Henderson, H.T. ; Ashley, K.L.

  • Volume
    57
  • Issue
    9
  • fYear
    1969
  • Firstpage
    1677
  • Lastpage
    1677
  • Abstract
    Limited success is reported in growing a thallium-doped silicon crystal, partially compensated with phosphorus. A diode constructed of this material gives a negative-differential resistance at the onset of double injection.
  • Keywords
    Bandwidth; Electron traps; Equations; Impurities; Oscilloscopes; Semiconductor diodes; Silicon; Tail; Temperature; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7368
  • Filename
    1449298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907689