Title :
High-efficiency transferred electron oscillators
Author :
Reynolds, J.F. ; Berson, B.E. ; Enstrom, R.E.
Abstract :
Results of material research and circuit development for high-efficiency GaAs transferred electron oscillators are described, Single-chip devices have been operated with efficiencies as high as 32.2 percent at L-band frequencies. Devices made by paralleling chips have yielded powers as high as 220 watts with 23.2 percent efficiency.
Keywords :
Circuit optimization; Circuit testing; Coaxial components; Electrons; Gallium arsenide; Gunn devices; L-band; Oscillators; Packaging; Radio frequency;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1969.7380
