• DocumentCode
    907833
  • Title

    High-efficiency transferred electron oscillators

  • Author

    Reynolds, J.F. ; Berson, B.E. ; Enstrom, R.E.

  • Volume
    57
  • Issue
    9
  • fYear
    1969
  • Firstpage
    1692
  • Lastpage
    1693
  • Abstract
    Results of material research and circuit development for high-efficiency GaAs transferred electron oscillators are described, Single-chip devices have been operated with efficiencies as high as 32.2 percent at L-band frequencies. Devices made by paralleling chips have yielded powers as high as 220 watts with 23.2 percent efficiency.
  • Keywords
    Circuit optimization; Circuit testing; Coaxial components; Electrons; Gallium arsenide; Gunn devices; L-band; Oscillators; Packaging; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7380
  • Filename
    1449310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907833