Title :
Voltage-controlled three terminal GaAs negative differential resistance device using n+-i-p+-i-n + structure
Author :
Yarn, K.F. ; Wang, Y.H. ; Chang, C.Y. ; Chang, C.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/1990 12:00:00 AM
Abstract :
A novel three terminal GaAs n+-i-p +-i-n+ negative differential resistance device prepared by molecular beam epitaxy is demonstrated for the first time. The peak-to-valley current ratios can be modulated by the third external applied voltage which can be expressed as Ip/Iv=5.08×10-3 exp [1.999 VBE] at room temperature, where VBE is in volts. It implies that large peak-to-valley current ratios (e.g. IP/I V=300 at VBE=5.5 V) and large peak current densities can easily be obtained just by increasing the V BE bias. A phenomenological bipolar-unipolar transition model is proposed to interpret the observed behavior and confirmed by experiments
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; negative resistance; GaAs; III-V semiconductors; NDR device; bipolar-unipolar transition model; molecular beam epitaxy; n+-i-p+-i-n+ structure; negative differential resistance device; peak-to-valley current ratios; three-terminal device; voltage controlled device;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
