Title :
Intensity distribution of semiconductor laser emission due to the excitation of satellite modes
Author_Institution :
Technische Universit¿¿t M¿¿nchen, Lehrstuhl f¿¿r Allgemeine Elektronik, M¿¿nchen, West Germany
fDate :
4/1/1985 12:00:00 AM
Abstract :
The fluctuations of the lasing mode intensity due to weakly excited satellite modes are discussed, in terms of the probability distribution, for a semiconductor laser with homogeneous gain saturation. The dependence of the intensity distribution on the injection rate and on the gain spectrum shift is investigated.
Keywords :
electron device noise; laser modes; semiconductor junction lasers; gain spectrum shift dependence; homogeneous gain saturation; injection rate dependence; intensity distribution; lasing mode intensity fluctuations; noise characteristics; probability distribution; semiconductor laser emission; weakly excited satellite modes;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1985.0029
