DocumentCode
907947
Title
Bumpless monotonic bicubic interpolation for MOSFET device modelling
Author
Shima, T.
Author_Institution
Toshiba Corporation, R & D Centre, Kawasaki, Japan
Volume
132
Issue
3
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
147
Lastpage
150
Abstract
A bumpless monotonic bicubic interpolation (MBI) technique is proposed. The method is applied to MOSFET device modelling for guessing at a very smooth interpolated curved surface. Monotonic increase in a two-dimensional surface can be held, even if the actual device characteristics show steepest change, like punchthrough characteristics. The technique can be utilised for very small number micron and/or submicron VLSI MOSFET device modelling.
Keywords
VLSI; circuit analysis computing; digital simulation; field effect integrated circuits; insulated gate field effect transistors; interpolation; semiconductor device models; MOSFET device modelling; bumpless monotonic bicubic interpolation; micron dimensions; simulation; smooth interpolated curved surface; submicron VLSI;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1985.0030
Filename
4643911
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