Simple quasi-two-dimensional analytical model to characterise the electric field in an LDD MOSFET

Author

Patel, R.H. ; Kwong, D.L. ; Herr, N.

Author_Institution

Philips Components Signetics, Sunnyvale, CA, USA

Volume

137

Issue

4

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

291

Lastpage

294

Abstract

A simple analytical model for the lateral electric field in the drain region is developed for an LDD MOSFET. A quasi-two-dimensional analysis is employed to derive this model under the assumption of a two-dimensional doping profile of the LDD region. The results obtained by the model agree well with the two-dimensional PISCES simulations of the electric field in the drain region. Furthermore, the format of the model is readily implementable in a circuit simulator to better understand the mechanisms involved in reducing the electric field in the LDD region with respect to circuit optimisation. Results show the behaviour of the electric field under the influence of the length and doping concentration of the LDD region. Influence of the oxide thickness and junction depth are also accounted for by the model

Keywords

doping profiles; electric fields; insulated gate field effect transistors; semiconductor device models; LDD MOSFET; circuit optimisation; circuit simulator; doping concentration; drain region; electric field; junction depth; oxide thickness; quasi-two-dimensional analytical model; two-dimensional PISCES;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

217090