Title :
Photovoltaic effects of GaAs MESFET layers
Author :
Papaioannou, G.J. ; Kaliakatsos, J.A. ; Euthymiou, P.C. ; Forrest, J.R.
Author_Institution :
University of Athens, Solid State Physics Section of the Physics Department, Athens, Greece
fDate :
6/1/1985 12:00:00 AM
Abstract :
The photovoltaic properties of GaAs MESFET layers are studied by varying illumination wavelength and temperature for two different electrode geometry devices. The active layer-substrate photoresponse is determined by the substrate deep traps. A significant contribution to the Dember effect is observed when the device electrode path is extended over the substrate. The photovoltage response to amplitude modulated illumination is limited by trapping effects within the substrate
Keywords :
Dember effect; III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; photovoltaic effects; Dember effect; GaAs MESFET layers; III-V semiconductor; active layer-substrate photoresponse; amplitude modulated illumination; electrode geometry; hole traps; illumination wavelength; photovoltage response; photovoltaic properties; substrate deep traps; temperature; trapping effects;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1985.0034
