DocumentCode
908076
Title
Photovoltaic effects of GaAs MESFET layers
Author
Papaioannou, G.J. ; Kaliakatsos, J.A. ; Euthymiou, P.C. ; Forrest, J.R.
Author_Institution
University of Athens, Solid State Physics Section of the Physics Department, Athens, Greece
Volume
132
Issue
3
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
167
Lastpage
170
Abstract
The photovoltaic properties of GaAs MESFET layers are studied by varying illumination wavelength and temperature for two different electrode geometry devices. The active layer-substrate photoresponse is determined by the substrate deep traps. A significant contribution to the Dember effect is observed when the device electrode path is extended over the substrate. The photovoltage response to amplitude modulated illumination is limited by trapping effects within the substrate
Keywords
Dember effect; III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; photovoltaic effects; Dember effect; GaAs MESFET layers; III-V semiconductor; active layer-substrate photoresponse; amplitude modulated illumination; electrode geometry; hole traps; illumination wavelength; photovoltage response; photovoltaic properties; substrate deep traps; temperature; trapping effects;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1985.0034
Filename
4643924
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