Title :
Harmonic distortion of the four-terminal MOSFET in non-quasistatic operation
Author :
Pu, L.-J. ; Tsividis, Y.P.
Author_Institution :
IBM Corp., Hopwell Junction, NY, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
The authors deal with the large-signal analysis of four-terminal MOS transistors from DC to frequencies where the operation is non-quasistatic. The numerical evaluation of harmonic distortion in such operation is considered. The results presented are verified through comparisons with measurements and provide (a) a sensitive indicator of how well the device physics is modelled, (b) benchmark results against which to compare future work on computationally efficient models and (c) an initial understanding of distortion in non-quasistatic operation, for circuit design purposes
Keywords :
electric distortion; insulated gate field effect transistors; semiconductor device models; benchmark results; circuit design; computationally efficient models; device physics modelling; four-terminal MOSFET; harmonic distortion numerical evaluation; large-signal analysis; nonquasistatic operation; sensitive indicator;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
