DocumentCode
908152
Title
Three-level oscillator: a new form of transferred-electron device
Author
Hilsum, C. ; Rees, H.D.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
6
Issue
9
fYear
1970
Firstpage
277
Lastpage
278
Abstract
Electron transfer between three appropriately coupled sets of conduction-band valleys produces transport properties peculiarly favourable for transferred-electron devices. The necessary conditions should obtain in InP and in InP-InAs and InSb-GaSb alloys. Monte Carlo calculations of the velocity/field characteristics for these materials are described.
Keywords
Monte Carlo methods; band structure; microwave oscillators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19700196
Filename
4234688
Link To Document