Title :
Three-level oscillator: a new form of transferred-electron device
Author :
Hilsum, C. ; Rees, H.D.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Electron transfer between three appropriately coupled sets of conduction-band valleys produces transport properties peculiarly favourable for transferred-electron devices. The necessary conditions should obtain in InP and in InP-InAs and InSb-GaSb alloys. Monte Carlo calculations of the velocity/field characteristics for these materials are described.
Keywords :
Monte Carlo methods; band structure; microwave oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700196
