Title :
Radiation-hardened microelectronics for accelerators
Author :
Gover, James E. ; Fischer, Thomas A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments.<>
Keywords :
radiation hardening (electronics); accelerators; diodes; displacement; electrical characteristics; functionality; integrated circuits; radiation hardened microelectronics; radiation limits; semiconducting materials; transistors; Acceleration; Atomic measurements; Charge carrier lifetime; Inductors; Ion accelerators; Ionization; Lattices; Microelectronics; Neutrons; Semiconductor materials;
Journal_Title :
Nuclear Science, IEEE Transactions on
