Simple high-frequency CMOS transconductor

Author

Singh, S.P. ; Hanson, J.V. ; Vlach, J.

Author_Institution

Dept. of Electr. Eng., Waterloo Univ., Ont., Canada

Volume

137

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

470

Lastpage

474

Abstract

A new transconductor, using only two transistors, is presented. It is based on standard inverter configurations and does not need matching of nMOS and pMOS transistors or of the power supply voltages. Reduction in nonlinearity is achieved by maintaining a zero offset condition. The circuit is not affected by variations in body effect as sources and substrates are connected to fixed voltages. Although the inverter has a low signal level handling capability (≃300 mV for a total harmonic distortion of 1%), this can be improved by the use of two inverters. This leads to a larger dynamic range and has no noticeable effect on bandwidth. A wideband integrator is developed, based on the new transconductor, with independent adjustment of quality factor and unity-gain frequency

Keywords

CMOS integrated circuits; frequency response; integrating circuits; linear integrated circuits; logic gates; network synthesis; CMOS transconductor; bandwidth; dynamic range; fixed voltages; inverter; inverter configurations; low signal level handling capability; nonlinearity reduction; quality factor; sources; substrates; total harmonic distortion; unity-gain frequency; wideband integrator; zero offset condition;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

217116