Title :
Effects of cathode lengths and epitaxial layer widths on n 1+n1-δ(p +)n2-n2 +p+ and n
Author_Institution :
Sch. of Electr. & Electron. Eng., Lancashire Polytech., Preston, UK
fDate :
12/1/1990 12:00:00 AM
Abstract :
The author describes the effects of the n1-cathode length and the n2-epitaxial layer width on the I/V characteristics of two-state homojunction n 1-π1-(p+-plane)-π 2-n2-p+ and n1-(p+-plane)-n2 -p+ structures. Both devices are regenerative bulk unipolar switches (BUS) in which the p+ injector modulates the internal barrier and hence modify the switching and holding parameters. It is found that the switching and holding points parameters decrease as the cathode length lko increases, and increase as the epilayer width lo increases. A comparison with existing experimental data is also presented
Keywords :
semiconductor epitaxial layers; semiconductor junctions; semiconductor switches; I/V characteristics; cathode lengths; epitaxial layer widths; experimental data; holding points; homojunction n1-π1-(p+-plane)-π2-n 2-p+ structures; homojunction n1-(p+-plane)-n2-pt structures; n1δ(p+)n2p+ switching devices; n1-cathode length; n1+n1-δ(p+ )n2-n2+p+ switching devices; n2-epitaxial layer width; regenerative bulk unipolar structures; switching points;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
