DocumentCode
908224
Title
Modelling of the sidegating and the backgating effects in GaAs MESFETs
Author
Kwok, H.L.
Author_Institution
Dept. of Electr. & Comp. Eng., Victoria Univ., BC, Canada
Volume
137
Issue
6
fYear
1990
fDate
12/1/1990 12:00:00 AM
Firstpage
459
Lastpage
462
Abstract
Sidegating and backgating effects affect the I /V characteristics of a GaAs MESFET built on SI substrates. The basic charge trapping, process can be related to current flowing through the channel substrate interface. This effectively changes the channel thickness. For the side-gating effect, the observed voltage threshold for current pinch-off is explained by the breakdown of a parasitic lateral npn transistor. An equivalent circuit model is put forward to include the sidegating and backgating effects. Reasonable results have been obtained during simulation
Keywords
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; interface electron states; semiconductor device models; GaAs; MESFET; backgating effects; breakdown; charge-trapping; current pinch-off; equivalent circuit model; npn transistor; observed voltage threshold; parasitic lateral transistor; side-gating effect; simulation;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
217119
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